CGH21120F Datasheet, PDF (1/13 Pages) Cree, Inc – 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

CGH21120F
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Cree’s CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH21120F ideal for 1.8-2.3 GHz WCDMA and LTE amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: _2414102106F2
Typical Performance Over 2.0-2.3GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
Units
Gain @ 43 dBm
14.0
15.0
15.0
14.5
dB
ACLR @ 43 dBm
-36.5
-36.0
-34.0
-33.5
dBc
Drain Efficiency @ 43 dBm
33.5
34.5
36.5
40.0
%
Note:
Measured in the CGH21120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
• 1.8 - 2.3 GHz Operation
• 15 dB Gain
• -35 dBc ACLR at 20 W P_AVE
• 35 % Efficiency at 20 W P_AVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/RF
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