CGH09120F Datasheet, PDF (1/13 Pages) Cree, Inc – 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM

CGH09120F
120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Cree’s CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities, which
makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The
transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: _0494102009F5
Typical Performance Over 800-950 MHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
800 MHz
850 MHz
900 MHz
950 MHz
Units
Gain @ 43 dBm
19.2
21.0
21.6
21.6
dB
ACLR @ 43 dBm
-40.5
-40.5
-39.0
-36.5
dBc
Drain Efficiency @ 43 dBm
31.0
33.7
36.6
39.3
%
Note:
Measured in the CGH09120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
• UHF - 2.5 GHz Operation
• 21 dB Gain
• -38 dBc ACLR at 20 W P_AVE
• 35 % Efficiency at 20 W P_AVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/RF
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