CGD15HB62P1 Datasheet, PDF (1/6 Pages) Cree, Inc – Gate Driver for 1200V, 62mm SiC MOSFET Power Module

Dual Channel SiC MOSFET Driver
Gate Driver for 1200V, 62mm SiC MOSFET Power Module
Features
 2 output channels
 Integrated isolated power supply
 Direct mount low inductance design
 Short circuit protection
 Under voltage protection
For use with Cree Modules
 CAS300M12BM2, 1200V, 300A module.
 CAS120M12BM2, 1200V, 120A module.
Applications
 Driver for SiC MOSFET modules in industrial
applications.
 DC Bus voltage up to 1000V
Part Number
CGD15HB62P1
Package
PCBA
Marking
CGD15HB62P1
Absolute Maximum Ratings
Symbol
Parameter
V_s
Power Supply Voltage
V_iH
Input signal voltage HIGH
V_iL
Input signal voltage LOW
Value
16
5
0
I_O.pk
Output peak current
±9 (±2)
P_{O_AVG}
F_Max
V_DS
V_isol
dv/dt
Ouput power per gate
1.8
Max. Switching frequency
Max. Drain to source
voltage
Input to output isolation
voltage
Rate of change of output to
input voltage
64
1200
±1200
50,000
Unit
V
Test Conditions
Note
V
V
Gate drive capable of 9A, but 10Ω
A
of gate resistance lowers peak to
2A
W
kHz
V
V
V/μs
1
CGD15HB62P1 Rev - , 09-2015