CAS325M12HM2 Datasheet, PDF (1/7 Pages) Cree, Inc – Ultra Low Loss, Low (5 nH) Inductance

CAS325M12HM2
1.2kV, 3.6 mΩ All-Silicon Carbide
High Performance, Half-Bridge Module
C2M MOSFET and Z-Rec^TM Diode
Features
• Ultra Low Loss, Low (5 nH) Inductance
• Ultra-Fast Switching Operation
• Zero Reverse Recovery Current from Diode
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• AlSiC Baseplate and Si3N4 AMB Substrate
• Ease of Paralleling
•
•
High Temperature Packaging, T_J(max) = 175 °C
AS9100 / ISO9001 Certified Manufacturing
System Benefits
• Enables Compact, Lightweight Systems
• High Efficiency Operation
• Reduced Thermal Requirements
Applications
• High-Efficiency Converters / Inverters
• Motor & Traction Drives
• Smart-Grid / Grid-Tied Distributed Generation

V_DS 1.2 kV
E_{sw, Total @ 600V, 300A}
9.3 mJ
R_DS(on)
3.6 mΩ
Package
65mm x 110mm x 10mm


Part Number
CAS325M12HM2
Package
Half-Bridge Module
Marking
CAS325M12HM2
Maximum Ratings (T_C = 25˚C unless otherwise specified)
Symbol
Parameter
Value
V_DSmax
V_GSmax
V_GSop
I_D
T_Jmax
T_C ,T_STG
V_isol
P_D
Drain - Source Voltage
Gate - Source Voltage, Maximum values
Gate - Source Voltage, Recommended Operation
values
Continuous Drain Current
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Power Dissipation
1.2
-10/+25
-10/+23
-5/+20
-5/+18
444
256
175
-55 to +175
1.2
1500
Unit
Test Conditions
kV
T_J = -55 to 150 °C
V
T_J = -55 to 175 °C
T_J = -55 to 150 °C
V
T_J = -55 to 175 °C
T_C = 25 ˚C T_J = 175 °C
A
T_C = 125˚C, T_J = 175 °C
˚C
˚C
kV AC, 50 Hz , 1 min
W TC = 25 ˚C, TJ = 175 ˚C (per switch)
Subject to change without notice.
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Notes
Fig. 17
Fig. 16
1