CAS300M12BM2_14 Datasheet, PDF (1/9 Pages) Cree, Inc – Half-Bridge Module

CAS300M12BM2
1.2kV, 5.0 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-Rec^TM Diode
V_DS 1.2 kV
E_{sw, Total @ 300A}
12.0 mJ
R_DS(on)
5.0 mΩ
Features
• Ultra Low Loss
• High-Frequency Operation
• Zero Reverse Recovery Current from Diode
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• Ease of Paralleling
• Copper Baseplate and Aluminum Nitride Insulator
System Benefits
• Enables Compact and Lightweight Systems
• High Efficiency Operation
• Mitigates Over-voltage Protection
• Reduced Thermal Requirements
• Reduced System Cost
Applications
• Induction Heating
• Motor Drives
• Solar and Wind Inverters
• UPS and SMPS
• Traction

Package 62mm x 106mm x 30mm


Part Number
Package
Marking
CAS300M12BM2 Half-Bridge Module CAS300M12BM2
Maximum Ratings (T_C = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
I_D
Continuous Drain Current
I_D(pulse)
Pulsed Drain Current
T_Jmax
Junction Temperature
T_C ,T_STG
V_isol
Case and Storage Temperature Range
Case Isolation Voltage
L_Stray
Stray Inductance
P_D
Power Dissipation
1.2
-10/+25
-5/20
404
285
1500
150
kV
V Absolute Maximum values
V Recommended Operational Values
VGS = 20 V, T_C = 25 ˚C
A
VGS = 20 V, T_C = 90 ˚C
A
Pulse width t_P = 200 μs Repetition rate
limited by Tjmax,TC = 25˚C
˚C
-40 to +125
4.0
˚C
kV AC, 50 Hz , 1 min
14
nH Measured between terminals 2 and 3
1660
W TC = 25 ˚C, TJ = 150 ˚C
Fig. 24
Fig. 23
Subject to change without notice.
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