CAS300M12BM2 Datasheet, PDF (1/8 Pages) Cree, Inc – 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module

CAS300M12BM2
1.2kV, 5.0 mΩ All-Silicon Carbide
Half-Bridge Module
Z-FET™ MOSFET and Z-Rec™ Diode
V_DS
E_{sw,Total@300A}
R_DS(on)
= 1.2 kV
= 12.0 mJ
= 5.0 mΩ
Module Features
 Ultra Low Loss
 High-Frequency Operation
 Zero Reverse Recovery Current from Diode
 Zero Turn-off Tail Current from MOSFET
 Normally-off, fail-safe device operation
 Ease of paralleling
 Copper baseplate and aluminum nitride insulator
Package
62 mm x 106 mm x 30 mm
System Benefits
 Enables compact and lightweight systems
 High efficiency operation
 Mitigates over-voltage protection
 Reduces thermal requirements
 Enables simplified topologies
Applications
 Induction Heating
 Motor Drives
 Solar and Wind Inverters
 UPS and SMPS
 Traction
Part Number
CAS300M12BM2
Package
Half Bridge Module
Marking
CAS300M12BM2
Maximum Ratings (T_C = 25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
V_DSmax
V_GSmax
V_GSop
I_D
Drain – Source Voltage
Gate – Source Voltage
Gate – Source Voltage
Continuous Drain Current
1.2
kV
-10/+25
V
-5/+20
V
404
A
285
A
I_Dpulse
Pulsed Drain Current
1500
A
T_Jmax
Junction Temperature
150
°C
T_C
T_stg
Case and Storage Temperature
Range
-40 to
+125
°C
P_tot
V_isol
L_stray
M
Maximum Power Dissipation
Case Isolation Voltage
Stray Inductance
Mounting Torque
1660
W
4.0
kV
14
nH
5
Nm
G
Weight
300
g
Clearance Distance
12
mm
Creepage Distance
30
mm
40
mm
Test Conditions
Absolute maximum values
Recommended operational values
V_GS = 20 V, T_C = 25 °C
V_GS = 20 V, T_C = 90 °C
Pulse width t_P = 200 µs repetition rate
limited by T_J(max), T_C = 25°C
T_C = 25 °C, T_J = 150 °C
AC, 50 Hz, 1 min
Measured between terminals 2 and 3
To heatsink and terminals
Terminal to terminal
Terminal to terminal
Terminal to baseplate
Note
Fig 20
1