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| CAS120M12BM2 Datasheet, PDF (1/9 Pages) Cree, Inc – Half-Bridge Module | |||
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CAS120M12BM2
1.2kV, 13 m⦠All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-Rec® Diode
VDS
Esw, Total @ 120A, 150 ËC
RDS(on)
1.2 kV
2.1 mJ
13 mâ¦
Features
⢠Ultra Low Loss
⢠High-Frequency Operation
⢠Zero Reverse Recovery Current from Diode
⢠Zero Turn-off Tail Current from MOSFET
⢠Normally-off, Fail-safe Device Operation
⢠Ease of Paralleling
⢠Copper Baseplate and Aluminum Nitride Insulator
System Benefits
⢠Enables Compact and Lightweight Systems
⢠High Efficiency Operation
⢠Mitigates Over-voltage Protection
⢠Reduced Thermal Requirements
⢠Reduced System Cost
Applications
⢠Induction Heating
⢠Solar and Wind Inverters
⢠DC/DC Converters
⢠Line Regen Drives
⢠Battery Chargers
Package 62mm x 106mm x 30mm
Part Number
Package
Marking
CAS120M12BM2 Half-Bridge Module CAS120M12BM2
Maximum Ratings (TC = 25ËC unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID
Continuous MOSFET Drain Current
ID(pulse)
Pulsed Drain Current
1.2
-10/+25
-5/20
193
138
480
kV
V Absolute maximum values
V Recommended operational values
VGS = 20 V, TC = 25 ËC
A
VGS = 20 V, TC = 90 ËC
A Pulse width tp limited by TJ(max)
IF
Continuous Diode Forward Current
TJmax
Junction Temperature
305
195
-40 to +150
VGS = -5 V, TC = 25 ËC
A
VGS = -5 V, TC = 90 ËC
ËC
TC ,TSTG
Visol
Case and Storage Temperature Range
Case Isolation Voltage
-40 to +125
5
ËC
kV AC, 50 Hz , 1 min
LStray
Stray Inductance
15
nH Measured between terminals 2 and 3
PD
Power Dissipation
925
W TC = 25 ËC, TJ = 150 ËC
Subject to change without notice.
www.cree.com
Notes
Fig. 26
Fig. 25
1
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