C460XT290-S2400-A Datasheet, PDF (1/6 Pages) Cree, Inc – Low Forward Voltage - 3.2 Typical at 20 mA

XThin^® LEDs
CxxxXT290-Sxx00-A
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
FEATURES
• XThin LED Performance
ŠŠ 460 & 470 nm
–– XT-12™ – 12.0 mW min.
–– XT-16™ – 16.0 mW min.
–– XT-18™ – 18.0 mW min.
–– XT-21™ – 21.0 mW min.
–– XT-24™ – 24.0 mW min.
ŠŠ 505nm – 8.5 mW min.
ŠŠ 527nm – 7.0 mW min.
• Thin 115 µm Chip
• Low Forward Voltage - 3.2 Typical at 20 mA
• Single Wire Bond Structure
• Class 2 ESD Rating
APPLICATIONS
• Cellular Phone LCD Backlighting
• Digital Camera Flash for Mobile Appliance
• Mobile Phone Key Pads
–– White LEDs
–– Blue LEDs
–– Green LEDs
• Automotive Dashboard Lighting
• LED Video Displays
• Audio Product Display Lighting
• Traffic Signals
CxxxXT290-Sxx00-A Chip Diagram
Top View
Bottom View
Die Cross Section
G•SiC LED Chip
300 x 300 μm
Gold Bond Pad
105 μm Diameter
Backside
Metalization
Cathode (-)
SiC Substrate
t = 115µm
Anode (+)
Subject to change without notice.
www.cree.com
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