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C460XT290-0117-A Datasheet, PDF (1/6 Pages) Cree, Inc – XThin LEDs | |||
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XThin® LEDs
CxxxXT290-Sxx00-A
Creeâs XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Creeâs proprietary Gâ¢SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Creeâs XT⢠chips are tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
FEATURES
⢠XThin LED Performance
ï· 460 & 470 nm
â XT-12⢠â 12.0 mW min.
â XT-16⢠â 16.0 mW min.
â XT-18⢠â 18.0 mW min.
â XT-21⢠â 21.0 mW min.
â XT-24⢠â 24.0 mW min.
ï· 505nm â 8.5 mW min.
ï· 527nm â 7.0 mW min.
⢠Thin 115 µm Chip
⢠Low Forward Voltage - 3.2 Typical at 20 mA
⢠Single Wire Bond Structure
⢠Class 2 ESD Rating
APPLICATIONS
⢠Cellular Phone LCD Backlighting
⢠Digital Camera Flash for Mobile Appliance
⢠Mobile Phone Key Pads
â White LEDs
â Blue LEDs
â Green LEDs
⢠Automotive Dashboard Lighting
⢠LED Video Displays
⢠Audio Product Display Lighting
⢠Traffic Signals
CxxxXT290-Sxx00-A Chip Diagram
Top View
Bottom View
Die Cross Section
Gâ¢SiC LED Chip
300 x 300 μm
Gold Bond Pad
105 μm Diameter
Backside
Metalization
Cathode (-)
SiC Substrate
t = 115µm
Anode (+)
Subject to change without notice.
www.cree.com
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