C460UT230-0105 Datasheet, PDF (1/4 Pages) Cree, Inc – UltraThin LEDs

UltraThin™ LEDs
CxxxUT230-S0100
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC^® substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
• Small Chip – 230 x 230 x 85 μm
• Low Forward Voltage
– 3.3V Typical at 20 mA
• UT LED Performance
– 8.0 mW min. (455–475 nm) Blue
• Single Wire Bond Structure
• Class 2 ESD Rating
APPLICATIONS
• Mobile Phone Keypads
– White LEDs
– Blue LEDs
• Audio Product Display Lighting
• Mobile Appliance Keypads
CxxxUT230-S0100 Chip Diagram
Top View
G•SiC LED Chip
230 x 230 μm
Mesa (junction)
176 x 176 μm
Bottom View
Gold Bond Pad
105 μm Diameter
Die Cross Section
SiC Substrate
Bottom Surface
150 x 150 μm
Anode (+)
InGaN
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Cathode (-)
Subject to change without notice.
www.cree.com