C460UT200-0201 Datasheet, PDF (1/5 Pages) Cree, Inc – Cree UltraThin LED

Cree^® UltraThin™ LED
Data Sheet
CxxxUT200-Sxxxx
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC^® substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
• Small Chip – 200 x 200 x 85 μm
• UT LED Performance
– 5.5 mW min. (455–475 nm) Blue
• Low Forward Voltage
– 2.9 V Typical at 5 mA
• Single Wire Bond Structure
• Class 2 ESD Rating
APPLICATIONS
• Mobile Phone Keypads
• Audio Product Display Lighting
• Mobile Appliance Keypads
• Automotive Applications
CxxxUT200-Sxxxx Chip Diagram
Top View
G•SiC LED Chip
200 x 200 μm
Mesa (junction)
150 x 150 μm
Gold Bond Pad
90 μm Diameter
Bottom View
Die Cross Section
SiC Substrate
Bottom Surface
115 x 115 μm
Anode (+)
InGaN
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Cathode (-)
Subject to change without notice.
www.cree.com