C450UT170-S1200-31 Datasheet, PDF (1/6 Pages) Cree, Inc – Single Wire Bond Structure

Cree^® UltraThin^® Gen 3 LEDs
Data Sheet
CxxxUT170-Sxxxx-31
Cree’s UltraThin^® LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC^® substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
• Small Chip – 170 x 170 x 50 μm
• Single Wire Bond Structure
• UT LED Performance
– 450 nm – 12+ mW
– 460 nm – 12+ mW
– 470 nm – 10+ mW
– 527 nm – 4+ mW
• Low Forward Voltage
– 2.95 V Typical at 5 mA
• Class 2 ESD Rating
APPLICATIONS
• Mobile Phone Keypads
• Audio Product Display Lighting
• Mobile Appliance Keypads
• Automotive Applications
CxxxUT170-Sxxxx-31 Chip Diagram
Top View
Anode (+), Ф85 µm
(Bonding area, Ф70 µm)
Junction, 140 x 140 µm
Thickness 50 µm
Side View
170 x 170 µm
Bottom Surface
130 x 130 µm
Cathode (-)
80 x 80 µm
Bottom View
Subject to change without notice.
www.cree.com
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