C450EZ500-S11000-2_16 Datasheet, PDF (1/6 Pages) Cree, Inc – Cree EZ500-n Gen 2 LED

Cree^® EZ500-n™ Gen 2 LED
Data Sheet (Cathode-up)
CxxxEZ500-Sxxx00-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method.
These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips
are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
• EZBright Power Chip LED Rf Performance
− 450 nm - 110+ mW
− 460 nm - 110+ mW
− 470 nm - 90+ mW
− 527 nm - 30+ mW
• Lambertian Radiation
• Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
• Low Forward Voltage – 3.2 V typ at 150 mA
• Single Wire Bond Structure
• Dielectric Passivation Across Epi Surface
APPLICATIONS
• General Illumination
– Aircraft
– Decorative Lighting
– Task Lighting
– Outdoor Illumination
– Projection Lighting
• White LEDs
• Crosswalk Signals
• Backlighting
• Automotive
CxxxEZ500-Sxxx00-2 Chip Diagram
Top View
Mesa (Junction)
450 x 450 µm
Cathode (-), 130 x 130 µm
Backside Ohmic
Metallization
480 x 480 µm
Thickness
170 µm
Side View
Anode (+)
Bottom View
Subject to change without notice.
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