C450EZ290-S2400-2 Datasheet, PDF (1/6 Pages) Cree, Inc – Cree EZ290-n Gen 2 LEDs

Cree^® EZ290-n™ Gen 2 LEDs
Data Sheet (Cathode-up)
CxxxEZ290-Sxx00-2
Cree’s EZBright^® LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The
optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. These
vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are
tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as wearable devices, video displays and LCD backlighting.
FEATURES
• Lambertian Radiation Pattern
• Cathode-up design (n-pad up)
• EZBright LED Technology, binned @ 20 mA
– 450 nm – 24+ mW
– 460 nm – 24+ mW
– 470 nm – 21+ mW
– 527 nm – 8+ mW
• Low Forward Voltage (Vf) – 3.0 V Typical at 20 mA
• Maximum DC Forward Current – 50 mA
• AuSn Backside Metal for use with Conductive Adhesives,
Flux Eutectic Attach, Solder Paste & Solder Preforms
APPLICATIONS
• LCD Backlighting
– Mobile Devices
– Monitors
• Video Displays
• Wearable Devices
• Automotive Interior
CxxxEZ290-Sxx00-2 Chip Diagram
Top View
Cathode (-), Ø100 µm
Mesa (Junction)
225 x 225 µm
280 x 280 µm
Thickness
170 µm
Side View
Backside Ohmic
Metallization
Anode (+)
Bottom View
Subject to change without notice.
1
www.cree.com