C3M0120100K Datasheet, PDF (1/11 Pages) Cree, Inc – C3MTM SiC MOSFET technology

V_DS
1000 V
C3M0120100K
I_D @ 25˚C
22 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
R_DS(on)
120 mΩ
N-Channel Enhancement Mode
Features
Package
• C3M^TM SiC MOSFET technology
• Optimized package with separate driver source pin
TAB
Drain
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
•
•
Fast intrinsic diode with low reverse recovery (Q_rr)
Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
1 234
D SSG
Drain
(Pin 1, TAB)
Gate
(Pin 4)
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Part Number
C3M0120100K
Package
TO 247-4
Marking
C3M0120100K
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
I_D
Continuous Drain Current
1000
-8/+19
-4/+15
22
13.5
I_D(pulse) Pulsed Drain Current
50
P_D
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
Note (1): When using MOSFET Body Diode V_GSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
83
-55 to
+150
260
Unit
Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
V_GS = 15 V, T_C = 25˚C
A
V_GS = 15 V, T_C = 100˚C
A Pulse width t_P limited by T_jmax
W T_C=25˚C, T_J = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
1
C3M0120100K Rev. -, 12-2016
Note
Note: 1
Note: 2
Fig. 19
Fig. 22
Fig. 20