C3M0120090J Datasheet, PDF (1/10 Pages) Cree, Inc – Silicon Carbide Power MOSFET

V_DS
900 V
C3M0120090J
I_D @ 25˚C
22 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
R_DS(on)
120 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3M SiC MOSFET technology
• High blocking voltage with low On-resistance
TAB
Drain
• High speed switching with low capacitances
• New low impedance package with driver source
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
Benefits
• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency
1 2 34 5 6 7
G KS S S S S S
Drain
(TAB)
Applications
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies
• Lighting
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
C3M0120090J
7L D2PAK
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
I_D
Continuous Drain Current
900
-8/+18
-4/+15
22
14
I_D(pulse) Pulsed Drain Current
50
P_D
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
83
-55 to
+150
260
Unit
Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
V_GS = 15 V, T_C = 25˚C
A
V_GS = 15 V, T_C = 100˚C
A Pulse width t_P limited by T_jmax
W T_C=25˚C, T_J = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Note (1)
Fig. 19
Fig. 22
Fig. 20
1
C3M0120090J Rev. - , 12-2015