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C3M0120090D Datasheet, PDF (1/10 Pages) Cree, Inc – Silicon Carbide Power MOSFET | |||
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VDS
900 V
C3M0120090D
ID @ 25ËC
23 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on)
120 mâ¦
N-Channel Enhancement Mode
Features
Package
⢠New C3M SiC MOSFET technology
⢠High blocking voltage with low On-resistance
⢠High speed switching with low capacitances
⢠Fast intrinsic diode with low reverse recovery (Qrr)
⢠Halogen free, RoHS compliant
Benefits
⢠Higher system efficiency
⢠Reduced cooling requirements
⢠Increased power density
⢠Increased system switching frequency
Applications
⢠Renewable energy
⢠EV battery chargers
⢠High voltage DC/DC converters
⢠Switch Mode Power Supplies
⢠Lighting
Part Number
C3M0120090D
Package
TO-247-3
Maximum Ratings (TC = 25 ËC unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID
Continuous Drain Current
900
-8/+18
-4/+15
23
15
ID(pulse) Pulsed Drain Current
50
PD
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL
Solder Temperature
Note (1): MOSFET can also safely operate at 0/+15 V
97
-55 to
+150
260
Unit
Test Conditions
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
VGS = 15 V, TC = 25ËC
A
VGS = 15 V, TC = 100ËC
A Pulse width tP limited by Tjmax
W TC=25ËC, TJ = 150 ËC
ËC
ËC 1.6mm (0.063â) from case for 10s
Note
Note: 1
Fig. 19
Fig. 22
Fig. 20
1
C3M0120090D Rev. - , 11-2015
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