C3D30065D Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D30065D
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
Package
V_RRM = 650 V
I_F (T_C=135˚C) =  36 A^**
Q_c = 89 nC^**
• 650 Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
TO-247-3
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
Maximum Ratings (TC=25°C unless otherwise specified)
Part Number
C3D30065D
Package
TO-247-3
Marking
C3D30065
Symbol
Parameter
Value
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
650
V
V_RSM
Surge Peak Reverse Voltage
650
V
V_DC
DC Blocking Voltage
I_F
Continuous Forward Current
(Per Leg/Device)
I_FRM
I_FSM
I_F,Max
P_tot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation(Per Leg/Device)
Diode dV/dt ruggedness
∫i²dt
i²t value
T_J , T_stg Operating Junction and Storage Temperature
TO-247 Mounting Torque
* _{Per Leg,} ** _{Per Device}
650
V
39/78
18/36
15/30
66*
46*
162
150
1400
1200
150
65
200
131*
112.5*
-55 to +175
A
A
A
A
W
V/ns
A²s
˚C
T_C=25˚C
T_C=135˚C
T_C=145˚C
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C-110˚C, t_P=10 ms, Half Sine Pulse
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
T_C=25˚C, t_P=10 ms, Pulse
T_C=110˚C, t_P=10 ms, Pulse
T_C=25˚C
T_C=110˚C
V_R=0-600V
T_C=25˚C, t_P=10 ms
T_C=110˚C, t_P=10 ms
1
Nm M3 Screw
8.8
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1
C3D30065D Rev. -, 09-2016