C3D20065D Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D20065D
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
V_RRM
=
650 V
I_F (T_C=135˚C) = 28 A**
Q_c
= 50 nC**
Features
Package
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
TO-247-3
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Solar Inverters
• Power Factor Correction
•
- Typical PFC P_out : 2000W-4000W
Motor Drives
- Typical Power : 5HP-10HP
Part Number
C3D20065D
Package
TO-247-3
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Marking
C3D20065
Note
V_RRM
Repetitive Peak Reverse Voltage
650
V
V_RSM
Surge Peak Reverse Voltage
650
V
V_DC
DC Blocking Voltage
650
V
29.5/59
T_C=25˚C
I_F
ContinuousForward Current (Per Leg/Device) 14/28
A T_C=135˚C
10/20
T_C=152˚C
I_FRM
Repetitive Peak Forward Surge Current
(Per Leg/Device)
67/134
44/88
A
T_C=25˚C, t_P=10 ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
I_FSM
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
90/157
71/115
A
T_C=25˚C, t_P=10ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
I_FSM
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
250/500 A T_C=25˚C, t_P=10 µs, Pulse
P_tot
Power Dissipation (Per Leg)
T_J , T_stg Operating Junction and Storage Temperature
136.3
59
-55 to
+175
W
T_C=25˚C
T_C=125˚C
˚C
TO-247 Mounting Torque
* _{Per Leg,} ** _{Per Device}
1
Nm M3 Screw
8.8
lbf-in 6-32 Screw
1
C3D20065D Rev. -