C3D1P7060Q_16 Datasheet, PDF (1/7 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D1P7060Q
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 600-Volt Schottky Rectifier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Small compact surface mount package
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• LED Lighting
• Medical imaging systems
Package
V_RRM
= 600 V
I_F (T_C=135˚C) = 3.3 A
Q_c =4 nC
PowerQFN 3.3x3.3
Part Number
C3D1P7060Q
Package
QFN 3.3
Marking
C3D1P7060
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
V_RRM
Repetitive Peak Reverse Voltage
V_RSM
Surge Peak Reverse Voltage
V_DC
DC Blocking Voltage
I_F
Continuous Forward Current
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_F,Max
Non-Repetitive Peak Forward Surge Current
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
600
600
600
9.7
3.3
1.7
7
4.5
15
12
50
40
35.5
13
-55 to
+160
V
V
V
T_C=25˚C
A
T_C=135˚C
T_C=150˚C
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave
T_C=110˚C, t_P = 10 ms, Half Sine Wave
A
T_C=25˚C, t_p = 10 ms, Half Sine Wave
T_C=110˚C, t_p = 10 ms, Half Sine Wave
T_C=25˚C, t_P = 10 µs, Pulse
T_C=110˚C, t_P = 10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
1
C3D1P7060Q Rev. F, 10-2015
Note
Fig 3
Fig. 8
Fig. 8
Fig. 4