C3D1P7060Q Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D1P7060Q
Silicon Carbide Schottky Diode
Z-Rec^™ Rectifier
Features
• 600-Volt Schottky Rectifier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Small compact surface mount package
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• LED Lighting
Package
V_RRM =
600 V
I_F; T_C<150˚C= 1.7 A
Q_c =
5.6 nC
PowerQFN 3.3x3.3
Part Number
C3D1P7060Q
Package
QFN 3.3
Marking
C3D1P7060
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
V_RRM
V_RSM
V_DC
I_F
I_FRM
I_FSM
P_tot
T_J , T_stg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
600
600
600
1.7
3
7
4.4
15
12
39
17
-55 to
+175
V
V
V
A
T_C<150˚C, No AC Component
A
T_C<135˚C, No AC Component
A
T_C=25˚C, t_P=10 ms, Half Sine pulse
T_C=110˚C, t_P=10 ms, Half Sine pulse
A
T_C=25˚C, t_P=10 ms, Half Sine pulse
T_C=110˚C, t_P=10 ms, Half Sine pulse
W
T_C=25˚C
T_C=110˚C
˚C
T_c
Maximum Case Temperature
150
˚C
Subject to change without notice.
www.cree.com
Note
See
Fig 3
1