C3D16065D Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D16065D
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
V_RRM
=
650 V
I_F (T_C=135˚C) = 22 A**
Q_c
= 42 nC**
Features
Package
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
TO-274-3
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Solar Inverters
• Motor Drives
• Electric Vehicle Charger

Part Number
C3D16065D
Package
TO-247-3
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Marking
C3D16065
Note
V_RRM
Repetitive Peak Reverse Voltage
650
V
V_RSM
Surge Peak Reverse Voltage
650
V
V_DC
DC Blocking Voltage
650
V
23/46
T_C=25˚C
I_F
Continuous Forward Current (Per Leg/Device) 11/22
A T_C=135˚C
8/16
T_C=150˚C
I_FRM
Repetitive Peak Forward Surge Current
(Per Leg/Device)
57/114
36/72
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
I_FSM
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
80/160
60/120
A
T_C=25˚C, t_p = 10 mS, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
I_FSM
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
220/440
A
T_C=25˚C, t_P = 10 µs, Pulse
P_tot
T_J , T_stg
Power Dissipation (Per Leg)
Operating Junction and Storage Temperature
100
43
-55 to
+175
W
T_C=25˚C
T_C=110˚C
˚C
TO-247 Mounting Torque
* _{Per Leg,} ** _{Per Device}
1
Nm M3 Screw
8.8
lbf-in 6-32 Screw
See
Fig. 3
1
C3D16065D Rev. -