C3D10065I_16 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D10065I
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
V_RRM
=
I_F (T_C=125˚C) =
Q_c =
650 V
10 A
24 nC
Features
Package
• 650-Volt Schottky Rectifier
• Ceramic Package Provides 2.5kV Isolation
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Positive Temperature Coefficient on V_F
Benefits
TO-220 ^Isolated
• Electrically Isolated Package
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
Applications
• HVAC
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter Stages
• AC/DC converters

Part Number
C3D10065I
Maximum Ratings (T_C = 25˚C unless otherwise specified)
Symbol Parameter
Value Unit
CASE
Package
Isolated TO-220-2
Test Conditions
Marking
C3D10065I
Note
V_RRM
Repetitive Peak Reverse Voltage
650
V_RSM
Surge Peak Reverse Voltage
650
V_DC
DC Blocking Voltage
I_F
Continuous Forward Current
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_F,Max
Non-Repetitive Peak Forward Surge Current
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
TO-220 Mounting Torque
650
19
10
9
67
44
90
71
860
680
60
26
-55 to
+175
1
8.8
V
V
V
T_C=25˚C
A
T_C=125˚C
T_C=135˚C
Fig. 3
A
T_C=25˚C, t_P=10 ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
A
T_C=25˚C, t_P=10ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
A
T_C=25˚C, t_P = 10 µs, Pulse
T_C=110˚C, t_P = 10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
Fig. 4
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
1
C3D10065I Rev. D, 01-2016