C3D10065E Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D10065E
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Motor Drives

Package
V_RRM
=
I_F (T_C=135˚C) =
Q_c =
650 V
15 A
24 nC
TO-252-2
PIN 1
PIN 2
Part Number
C3D10065E
CASE
Package
TO-252-2
Marking
C3D10065
Maximum Ratings (T_C = 25˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
V_RRM
V_RSM
V_DC
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
I_F
Continuous Forward Current
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_F,Max
Non-Repetitive Peak Forward Surge Current
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
650
V
650
V
650
32
15
10
43.5
28
90
71
860
680
150
65
-55 to
+175
V
T_C=25˚C
A T_C=135˚C
T_C=153˚C
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave
T_C=110˚C, t_P=10 ms, Half Sine Wave
A
T_C=25˚C, t_p = 10 ms, Half Sine Wave
T_C=110˚C, t_p = 10 ms, Half Sine Wave
A
T_C=25˚C, t_P = 10 µs, Pulse
T_C=110˚C, t_P = 10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
1
C3D10065E Rev. A, 10-2015
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4