C3D10065A Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D10065A–Silicon Carbide Schottky Diode
Z-Rec^™ Rectifier
Features
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
•
- Typical PFC P_out : 1000W-2000W
Motor Drives
- Typical Power : 3HP-5HP
Package
TO-220-2
PIN 1
PIN 2
CASE
Part Number
C3D10065A
Package
TO-220-2
V_RRM = 650 V
I_F(AVG) = 10 A
Q_c = 25 nC
Marking
C3D10065
Maximum Ratings
Symbol
Parameter
V_RRM
V_RSM
V_DC
I_F(AVG)
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
TO-220 Mounting Torque
Value Unit
Test Conditions
Note
650
V
650
V
650
V
10
A T_C=150˚C
67
44
90
71
250
136.3
59
-55 to
+175
1
8.8
A
T_C=25˚C, t_P=10 ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
A
T_C=25˚C, t_P=10ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
A T_C=25˚C, t_P=10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Subject to change without notice.
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