C3D10060G_14 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D10060G
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 600-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
• AEC-Q101 Qualified and PPAP Capable
Applications
• Switch Mode Power Supplies
• Power Factor Correction
•
- Typical PFC P_out : 1000W-2000W
Motor Drives
- Typical Power : 3HP-5HP
Package
V_RRM
=
600 V
I_F (T_C=135˚C) = 14 A
Q_c
= 25 nC
TO-263-2
PIN 1
PIN 2
CASE
Part Number
C3D10060G
Package
TO-263-2
Marking
C3D10060
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
V_RRM
V_RSM
V_DC
I_F
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
600
600
600
29.5
14
10
67
44
90
71
250
136
59
-55 to
+175
V
V
V
T_C=25˚C
A T_C=135˚C
T_C=152˚C
A
T_C=25˚C, t_P=10 ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
A
T_C=25˚C, t_P=10ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
A T_C=25˚C, t_P=10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
1
C3D10060G Rev. F