|
C3D08065A_15 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode | |||
|
C3D08065A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
⢠650-Volt Schottky Rectifier
⢠Zero Reverse Recovery Current
⢠Zero Forward Recovery Voltage
⢠High-Frequency Operation
⢠Temperature-Independent Switching Behavior
⢠Extremely Fast Switching
⢠Positive Temperature Coefficient on VF
Benefits
⢠Replace Bipolar with Unipolar Rectifiers
⢠Essentially No Switching Losses
⢠Higher Efficiency
⢠Reduction of Heat Sink Requirements
⢠Parallel Devices Without Thermal Runaway
Applications
⢠Switch Mode Power Supplies
⢠Power Factor Correction
⢠Motor Drives
Package
VRRM
= 650 V
IF (TC=135ËC) = 11 A
Qc =20 nC
TO-220-2
PIN 1
PIN 2
Part Number
C3D08065A
CASE
Package
TO-220-2
Marking
C3D08065
Maximum Ratings (TC = 25 ËC unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
IF
Continuous Forward Current
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
IF,Max
Non-Repetitive Peak Forward Surge Current
Ptot
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TO-220 Mounting Torque
650
V
24
11
8
37.5
25.5
71
60
650
530
107
46.5
-55 to
+175
1
8.8
TC=25ËC
A TC=135ËC
TC=152ËC
A
TC=25ËC, tP = 10 ms, Half Sine Wave
TC=110ËC, tP = 10 ms, Half Sine Wave
A
TC=25ËC, tp = 10 ms, Half Sine Wave
TC=110ËC, tp = 10 ms, Half Sine Wave
A
TC=25ËC, tP = 10 µs, Pulse
TC=110ËC, tP = 10 µs, Pulse
W
TC=25ËC
TC=110ËC
ËC
Nm M3 Screw
lbf-in 6-32 Screw
1
C3D08065A Rev. C, 12-2015
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4
|
▷ |