C3D08065A Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D08065A–Silicon Carbide Schottky Diode
Z-Rec^™ Rectifier
Features
Package
V_RRM = 650 V
I_F(AVG) = 8 A
Q_c = 21 nC
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
TO-220-2
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
CASE
Applications
• Switch Mode Power Supplies
• Power Factor Correction
•
- Typical PFC P_out : 800W-1600W
Motor Drives
- Typical Power : 3HP-4HP
Part Number
C3D08065A
Package
TO-220-2
Marking
C3D08065
Maximum Ratings
Symbol
Parameter
Value Unit
Test Conditions
V_RRM
V_RSM
V_DC
I_F(AVG)
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
650
V
650
V
650
V
8
A T_C=150˚C, DC
I_FRM
I_FSM
I_FSM
P_tot
T_J , T_stg
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
57
36
80
60
220
100
43
-55 to
+175
1
8.8
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
A
T_C=25˚C, t_p = 10 mS, Half Sine Wave, D=0.3
T_C=110˚C, t_P=10 ms, Half Sine Wave, D=0.3
A T_C=25˚C, t_P = 10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Note
Subject to change without notice.
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