C3D08060G_16 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D08060G
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 600-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters

Package
V_RRM
=
I_F (T_C=135˚C) =
Q_c =
600 V
11 A
21 nC
TO-263-2
PIN 1
PIN 2
CASE
Part Number
C3D08060G
Package
TO-263-2
Marking
C3D08060
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
V_RRM
Repetitive Peak Reverse Voltage
600
V
V_RSM
Surge Peak Reverse Voltage
600
V
V_DC
I_F
I_FRM
I_FSM
I_FSM
P_tot
T_J , T_stg
DC Blocking Voltage
600
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
24
11
8
37.5
25.5
71
60
650
530
107
46.5
-55 to
+175
V
T_C=25˚C
A T_C=135˚C
T_C=152˚C
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave
T_C=110˚C, t_P=10 ms, Half Sine Wave
A
T_C=25˚C, t_p = 10 mS, Half Sine Wave
T_C=110˚C, t_P=10 ms, Half Sine Wave
A
T_C=25˚C, t_P = 10 µs, Pulse
T_C=110˚C, t_P = 10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
1
C3D08060G Rev. G, 01-2016
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4