C3D06065I Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D06065I
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 650-Volt Schottky Rectifier
• Ceramic Package Provides 2.5kV Isolation
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Positive Temperature Coefficient on V_F
Benefits
• Electrically Isolated Package
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter Stages
• AC/DC converters
Package
V_RRM
=
I_F (T_C=135˚C) =
Q_c =
650 V
6A
15 nC
TO-220 Isolated
PIN 1
PIN 2

CASE
Part Number
Package
C3D06065I
Isolated TO-220-2
Marking
C3D06065I
Maximum Ratings (T_C = 25˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
V_RRM
Repetitive Peak Reverse Voltage
650
V_RSM
Surge Peak Reverse Voltage
650
V_DC
DC Blocking Voltage
I_F
Continuous Forward Current
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Peak Forward Surge Current
I_F,Max
Non-Repetitive Peak Forward Surge Current
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
TO-220 Mounting Torque
650
13
6
24
16
63
49
540
460
45.5
19.5
-55 to
+175
1
8.8
V
V
V
A
T_C=25˚C
T_C=135˚C
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave
T_C=110˚C, t_P = 10 ms, Half Sine Wave
A
T_C=25˚C, t_p = 10 ms, Half Sine Wave
T_C=110˚C, t_p = 10 ms, Half Sine Wave
A
T_C=25˚C, t_P = 10 µs, Pulse
T_C=110˚C, t_P = 10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
1
C3D06065I Rev. B, 01-2016
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4