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C3D06065E Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode | |||
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C3D06065E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
⢠650-Volt Schottky Rectifier
⢠Zero Reverse Recovery Current
⢠Zero Forward Recovery Voltage
⢠High-Frequency Operation
⢠Temperature-Independent Switching Behavior
⢠Extremely Fast Switching
⢠Positive Temperature Coefficient on VF
Benefits
⢠Replace Bipolar with Unipolar Rectifiers
⢠Essentially No Switching Losses
⢠Higher Efficiency
⢠Reduction of Heat Sink Requirements
⢠Parallel Devices Without Thermal Runaway
Applications
⢠Switch Mode Power Supplies (SMPS)
⢠Boost diodes in PFC or DC/DC stages
⢠Free Wheeling Diodes in Inverter stages
⢠AC/DC converters
Package
VRRVM RRM == 65065V0 V
IF (TICF=;1T35C<ËC1) 3=5ËC =9.85.A6 A
Qc Qc = =nC15 nC
TO-252-2
PIN 1
PIN 2
Part Number
C3D06065E
CASE
Package
TO-252-2
Marking
C3D06065
Maximum Ratings (TC = 25ËC unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
IF
IFRM
IFSM
IF,Max
Ptot
TJ , Tstg
DC Blocking Voltage
650
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
20
9.5
6
28
19
63
49
540
460
100
43
-55 to
+175
V
TC=25ËC
A TC=135ËC
TC=157ËC
A
TC=25ËC, tP = 10 ms, Half Sine Wave
TC=110ËC, tP = 10 ms, Half Sine Wave
A
TC=25ËC, tp = 10 ms, Half Sine Wave
TC=110ËC, tp = 10 ms, Half Sine Wave
A
TC=25ËC, tP = 10 µs, Pulse
TC=110ËC, tP = 10 µs, Pulse
W
TC=25ËC
TC=110ËC
ËC
1
C3D06065E Rev. A, 01-2016
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4
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