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C3D06065A_15 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode | |||
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C3D06065A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
⢠650-Volt Schottky Rectifier
⢠Zero Reverse Recovery Current
⢠Zero Forward Recovery Voltage
⢠High-Frequency Operation
⢠Temperature-Independent Switching Behavior
⢠Extremely Fast Switching
⢠Positive Temperature Coefficient on VF
Benefits
⢠Replace Bipolar with Unipolar Rectifiers
⢠Essentially No Switching Losses
⢠Higher Efficiency
⢠Reduction of Heat Sink Requirements
⢠Parallel Devices Without Thermal Runaway
Applications
⢠Switch Mode Power Supplies
⢠Power Factor Correction
⢠Motor Drives
Package
VRRM
= 650 V
IF (TC=135ËC) = 9 A
Qc =â 15 nC
TO-220-2
PIN 1
PIN 2
Part Number
C3D06065A
CASE
Package
TO-220-2
Marking
C3D06065
Maximum Ratings (TC = 25 ËC unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
IF
Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
TJ , Tstg
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
650
V
19
9
6
30
20
63
49
540
460
88
38
-55 to
+175
1
8.8
TC=25ËC
A TC=135ËC
TC=154ËC
A
TC=25ËC, tP = 10 ms, Half Sine Wave
TC=110ËC, tP = 10 ms, Half Sine Wave
A
TC=25ËC, tp = 10 ms, Half Sine Wave
TC=110ËC, tp = 10 ms, Half Sine Wave
A
TC=25ËC, tP = 10 µs, Pulse
TC=110ËC, tP = 10 µs, Pulse
W
TC=25ËC
TC=110ËC
ËC
Nm M3 Screw
lbf-in 6-32 Screw
1
C3D06065A Rev. C, 12-2015
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4
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