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C3D06060F_16 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode | |||
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C3D06060F
Silicon Carbide Schottky Diode
Z-Rec® Rectifier (Full-Pak)
VRRM
=
IF (TC=70ËC) =
Qc =
600 V
6A
16 nC
Features
Package
⢠600-Volt Schottky Rectifier
⢠Zero Reverse Recovery Current
⢠Zero Forward Recovery Voltage
⢠High-Frequency Operation
⢠Temperature-Independent Switching Behavior
⢠Extremely Fast Switching
â¢
â¢
Positive Temperature Coefficient on VF
Fully Isolated Case
TO-220-F2
Benefits
⢠Replace Bipolar with Unipolar Rectifiers
⢠Essentially No Switching Losses
⢠Higher Efficiency
⢠Reduction of Heat Sink Requirements
⢠Parallel Devices Without Thermal Runaway
Applications
⢠Switch Mode Power Supplies (SMPS)
⢠Boost diodes in PFC or DC/DC stages
⢠Free Wheeling Diodes in Inverter stages
⢠AC/DC converters
PIN 1
PIN 2
CASE
Part Number
C3D06060F
Package
TO-220-F2
Maximum Ratings (TC = 25 ËC unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
Marking
C3D06060
Note
VRSM
Surge Peak Reverse Voltage
600
V
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
DC Blocking Voltage
600
V
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
7.5
6
3
27
18
44
41
540
460
17
7.4
-55 to
+175
1
8.8
TC=25ËC
A TC=58ËC
TC=135ËC
A
TC=25ËC, tP = 10 ms, Half Sine Wave, D=0.3
TC=110ËC, tP=10 ms, Half Sine Wave, D=0.3
A
TC=25ËC, tp = 10 mS, Half Sine Wave, D=0.3
TC=110ËC, tp = 10 mS, Half Sine Wave, D=0.3
A
TC=25ËC, tP = 10 µs, Pulse
TC=110ËC, tP = 10 µs, Pulse
W
TC=25ËC
TC=110ËC
ËC
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 4
1
C3D06060F Rev. C, 01-2016
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