C3D04065E Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D04065E
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 650-Volt Schottky Rectifier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
- Typical PFC P_out : 400W-600W
Package
TO-252-2
PIN 1
PIN 2
Part Number
C3D04065E
V_RRM
=
650 V
I_F (T_C=135˚C) = 7.5 A
Q_c
=
8.5 nC
CASE
Package
TO-252-2
Marking
C3D04065
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
650
V_RSM
Surge Peak Reverse Voltage
650
V_DC
I_F
I_FRM
I_FSM
I_FSM
P_tot
T_J , T_stg
DC Blocking Voltage
Forward Continuous Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
650
15.5
7.5
4
22
17
31.9
28.5
110
75
32.5
-55 to
+175
V
V
V
T_C=25˚C
A
T_C=135˚C
T_C=155˚C
A
T_C=25˚C, t_P=10 mS, Half Sine Wave D=0.3
T_C=110˚C, t_P=10 mS, Half Sine Wave D=0.3
A
T_C=25˚C, t_P=10 mS, Half Sine Wave D=0.3
T_C=110˚C, t_P=10 mS, Half Sine Wave D=0.3
A
T_C=25˚C, t_P=10 µS, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
1
C3D04065E Rev. -