C3D04060F_13 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D04060F
Silicon Carbide Schottky Diode
Z-Rec^™ Rectifier (Full-Pak)
Features
• 650-Volt Schottky Rectifier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
•
•
Positive Temperature Coefficient on V_F
Fully Isolated Case
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
• No Additional Isolation Required
Applications
• Switch Mode Power Supplies
• Power Factor Correction
•
- Typical PFC P_out : 150W-300W
Motor Drives
Package
V_RRM
=
600 V
I_F (T_C=95˚C) = 4 A
Q_c
= 8.5 nC
TO-220-F2
PIN 1
PIN 2
CASE
Part Number
C3D04060F
Package
TO-220-F2
Marking
C3D04060
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
V_RRM
V_RSM
V_DC
I_F
I_FRM
I_FSM
I_FSM
P_tot
T_J , T_stg
Repetitive Peak Reverse Voltage
600
Surge Peak Reverse Voltage
600
DC Blocking Voltage
600
6
Continuous Forward Current
4
2.5
Repetitive Peak Forward Surge Current
21
13
Non-Repetitive Peak Forward Surge Current
30
25
Non-Repetitive Peak Forward Surge Current
110
Power Dissipation
13.1
5.7
Operating Junction and Storage Temperature
-55 to
+175
TO-220 Mounting Torque
1
8.8
V
V
V
T_C=25˚C
A T_C=95˚C
T_C=135˚C
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave, D=0.3
T_C=110˚C, t_P = 10 ms, Half Sine Wave, D=0.3
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave, D=0.3
T_C=110˚C, t_p = 10 mS, Half Sine Wave, D=0.3
A
T_C=25˚C, t_P = 10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
1
C3D04060F Rev. E