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| C3D04060A_15 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode | |||
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C3D04060A
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
VRRM
= 600 V
IF (TC=135ËC) =6 A
Qc =â 10 nC
Features
⢠600-Volt Schottky Rectifier
⢠Optimized for PFC Boost Diode Application
⢠Zero Reverse Recovery Current
⢠Zero Forward Recovery Voltage
⢠High-Frequency Operation
⢠Temperature-Independent Switching Behavior
⢠Extremely Fast Switching
⢠Positive Temperature Coefficient on VF
Benefits
⢠Replace Bipolar with Unipolar Rectifiers
⢠Essentially No Switching Losses
⢠Higher Efficiency
⢠Reduction of Heat Sink Requirements
⢠Parallel Devices Without Thermal Runaway
Applications
⢠Switch Mode Power Supplies (SMPS)
⢠Boost diodes in PFC or DC/DC stages
⢠Free Wheeling Diodes in Inverter stages
⢠AC/DC converters
Package
TO-220-2
PIN 1
PIN 2
Part Number
C3D04060A
CASE
Package
TO-220-2
Marking
C3D04060
Maximum Ratings (TC = 25 ËC unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
IF
Continuous Forward Current
IFRM
IFSM
IF,Max
Ptot
TJ , Tstg
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
V
13.5
6
4
17
12
30.5
20
220
160
52
22.5
-55 to
+175
1
8.8
TC=25ËC
A TC=135ËC
TC=155ËC
A
TC=25ËC, tP = 10 ms, Half Sine Wave
TC=110ËC, tP = 10 ms, Half Sine Wave
A
TC=25ËC, tp = 10 ms, Half Sine Wave
TC=110ËC, tp = 10 ms, Half Sine Wave
A
TC=25ËC, tP = 10 µs, Pulse
TC=110ËC, tP = 10 µs, Pulse
W
TC=25ËC
TC=110ËC
ËC
Nm M3 Screw
lbf-in 6-32 Screw
Note
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1
C3D04060A Rev. F, 10-2015
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