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C3D03060F_13 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode | |||
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C3D03060F
Silicon Carbide Schottky Diode
Z-Rec⢠Rectifier (Full-Pak)
Features
⢠600-Volt Schottky Rectifier
⢠Optimized for PFC Boost Diode Application
⢠Zero Reverse Recovery Current
⢠Zero Forward Recovery Voltage
⢠High-Frequency Operation
⢠Temperature-Independent Switching Behavior
⢠Extremely Fast Switching
⢠Positive Temperature Coefficient on VF
Benefits
⢠Replace Bipolar with Unipolar Rectifiers
⢠Essentially No Switching Losses
⢠Higher Efficiency
⢠Reduction of Heat Sink Requirements
⢠Parallel Devices Without Thermal Runaway
Applications
⢠Switch Mode Power Supplies
⢠Power Factor Correction
- Typical PFC Pout : 150W-300W
Package
VRRM
=
600 V
IF (TC=110ËC) =3 A
Qc =
6.7 nC
TO-220-F2
PIN 1
PIN 2
CASE
Part Number
C3D03060F
Package
TO-220-F2
Marking
C3D03060
Maximum Ratings (TC = 25 ËC unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
5
3
2
20
15
28
22
100
12.5
5.4
-55 to
+175
1
8.8
V
V
V
TC=25ËC
A
TC=110ËC
TC=135ËC
A
TC=25ËC, tP=10 mS, Half Sine Wave D=0.3
TC=110ËC, tP=10 mS, Half Sine Wave D=0.3
A
TC=25ËC, tP=10 mS, Half Sine Wave D=0.3
TC=110ËC, tP=10 mS, Half Sine Wave D=0.3
A
TC=25ËC, tP=10 µS, Pulse
W
TC=25ËC
TC=110ËC
ËC
Nm
lbf-in
M3 Screw
6-32 Screw
1
C3D03060F Rev. C
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