C3D03060E_13 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D03060E
Silicon Carbide Schottky Diode
Z-Rec^™ Rectifier
Features
• 600-Volt Schottky Rectifier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
- Typical PFC P_out : 300W-450W
Package
V_RRM
=
600 V
I_F (T_C=135˚C) = 5.5 A
Q_c =
6.7 nC
TO-252-2
PIN 1
PIN 2
CASE
Part Number
C3D03060E
Package
TO-252-2
Marking
C3D03060
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
V_RRM
V_RSM
V_DC
I_F
I_FRM
I_FSM
I_FSM
P_tot
T_J , T_stg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
600
600
600
11.5
5.5
3
18
13.5
26
23
100
53
23
-55 to
+175
V
V
V
T_C=25˚C
A
T_C=135˚C
T_C=160˚C
A
T_C=25˚C, t_P=10 mS, Half Sine Wave D=0.3
T_C=110˚C, t_P=10 mS, Half Sine Wave D=0.3
A
T_C=25˚C, t_P=10 mS, Half Sine Wave D=0.3
T_C=110˚C, t_P=10 mS, Half Sine Wave D=0.3
A
T_C=25˚C, t_P=10 µS, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
1
C3D03060E Rev. B