C2M1000170J Datasheet, PDF (1/10 Pages) Cree, Inc – Silicon Carbide Power MOSFET

C2M1000170J
V_DS
I_D @ 25˚C
1700 V
5.3 A
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
R_DS(on)
1.0 Ω
N-Channel Enhancement Mode
Feature s Package
• High blocking voltage with low R_DS(on)
• Easy to parallel and simple to drive
TAB
Drain
• Low parasitic inductance
• Separate driver source pin
• Ultra-low drain-gate capacitance
• Halogen Free, RoHS compliant
Benefits
• Higher system efficiency
• Smooth switching waveforms
• Reduced cooling requirements
• Increased system reliability
Applications
• Auxiliary power supplies
• Switch Mode Power Supplies
• High-voltage capacitive loads
1 2 34 5 6 7
G DS S S S S S
Drain
(TAB)
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Part Number
Package
C2M1000170J
7L D2PAK
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
I_D
Continuous Drain Current
I_D(pulse) Pulsed Drain Current
P_D
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
1700
-10/+25
-5/+20
5.3
3.6
6.0
78
-55 to
+150
260
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
V_GS = 20 V, T_C = 25˚C
A
V_GS = 20 V, T_C = 100˚C
A _{Pulse width tP limited by Tjmax}
W T_C=25˚C, T_J = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Note
Fig. 19
Fig. 22
Fig. 20
1
C2M1000170J Rev. A, 10-2015