C2M1000170D_15 Datasheet, PDF (1/10 Pages) Cree, Inc – Silicon Carbide Power MOSFET

V_DS
1700 V
C2M1000170D
I_D @ 25˚C
5.0 A
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
R_DS(on)
1.0 Ω
N-Channel Enhancement Mode
Feature s Package
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low R_DS(on)
• Easy to Parallel and Simple to Drive
• Ultra-low Drain-gate capacitance
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Increased System Switching Frequency
• Reduced Cooling Requirements
• Increased System Reliability
TO-247-3
Applications
• Auxiliary Power Supplies
• Switch Mode Power Supplies
• High-voltage Capacitive Loads
Part Number
C2M1000170D
Package
TO-247-3
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
I_D
Continuous Drain Current
I_D(pulse) Pulsed Drain Current
P_D
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
M_d
Mounting Torque
1700
-10/+25
-5/+20
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
5.0
V_GS = 20 V, T_C = 25˚C
A
3.5
V_GS = 20 V, T_C = 100˚C
6.0
A _{Pulse width tP limited by Tjmax}
69
-55 to
+150
W T_C=25˚C, T_J = 150 ˚C
˚C
260
˚C 1.6mm (0.063”) from case for 10s
1
8.8
Nm
lbf-in
M3 or 6-32 screw
Note
Fig. 19
Fig. 22
Fig. 20
1
C2M1000170D Rev. E, 10-2015