C2M1000170D Datasheet, PDF (1/7 Pages) Cree, Inc – Silicon Carbide Power MOSFET Z-FETTM MOSFET

V_DS
1700 V
C2M1000170D
Silicon Carbide Power MOSFET
TM
Z-FET MOSFET
I_D @ 25˚C
R_DS(on)
4.9 A
1.0 Ω
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low R_DS(on)
• Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Increased System Switching Frequency
• Reduced Cooling Requirements
• Increased System Reliability
TO-247-3
Applications
• Auxiliary Power Supplies
• Switch Mode Power Supplies
Part Number
C2M1000170D
Package
TO-247-3
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
I_{DS (DC)} Continuous Drain Current
I_{DS (pulse)} Pulsed Drain Current
V_GS Gate Source Voltage
4.9
V_GS = 20 V, T_C = 25 °C
A
3.0
V_GS = 20 V, T_C = 100 °C
5.0
A ^{Pulse width tP limited by Tjmax}
T_C = 25 °C
-10/+25 V
Fig. 14
Fig. 16
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
M_d
Mounting Torque
69
-55 to
+150
260
1
8.8
W T_C=25 °C, TJ = 150 °C
˚C
Fig. 13
˚C 1.6 mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1
C2M1000170D Rev. A