C2M0160120D_15 Datasheet, PDF (1/10 Pages) Cree, Inc – Silicon Carbide Power MOSFET

V_DS

1200 V
C2M0160120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
I_D @ 25˚C
R_DS(on)

19 A
160 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC Converters
• LED Lighting Power Supplies
Part Number
C2M0160120D
Package
TO-247-3
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
I_D
Continuous Drain Current
1200
V VGS = 0 V, ID = 100 μA
-10/+25 V Absolute maximum values
-5/+20 V Recommended operational values
19
12.5
V_GS = 20 V, T_C = 25˚C
A
V_GS = 20 V, T_C = 100˚C
Fig. 19
I_D(pulse) Pulsed Drain Current
40
A Pulse width t_P limited by T_jmax
Fig. 22
P_D
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
M_d
Mounting Torque
125
-55 to
+150
260
1
8.8
W T_C=25˚C , T_J = 150 ˚C
˚C
Fig. 20
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1
C2M0160120D Rev. C, 10-2015