C2M0160120D Datasheet, PDF (1/9 Pages) Cree, Inc – N-Channel Enhancement Mode

V_DS

1200 V
C2M0160120D
Silicon Carbide Power MOSFET
TM
Z-FET MOSFET
I_D(MAX) @ 25˚C
R_DS(on)
17.7 A
160 mΩ
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low R_DS(on)
• Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased System Switching Frequency
TO-247-3
Applications
• Auxiliary Power Supplies
• Solar Inverters
• High Voltage DC/DC Converters
• High-frequency applications
Part Number
C2M0160120D
Package
TO-247-3
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
I_{DS (DC)} Continuous Drain Current
I_{DS (pulse)} Pulsed Drain Current
V_GS Gate Source Voltage
P_tot
T_J , T_stg
Power Dissipation
Operating Junction and Storage
Temperature
T_L
Solder Temperature
M_d
Mounting Torque
17.7
11
45
-10/+25
V_GS@20 V, T_C = 25˚C
A
V_GS@20 V, T_C = 100˚C
A ^{Pulse width tP = 50 μs}
duty limited by T_jmax, T_C = 25˚C
V
125
-55 to
+150
260
1
8.8
W T_C=25˚C
˚C
˚C
1.6mm (0.063”) from case for
10s
Nm
lbf-in
M3 or 6-32 screw
Note
Fig. 19
Fig. 20
1
C2M0160120D Rev. -