C2M0080120D Datasheet, PDF (1/9 Pages) Cree, Inc – Silicon Carbide Power MOSFET Z-FETTM MOSFET

V_DS
1200 V
C2M0080120D
Silicon Carbide Power MOSFET
TM
Z-FET MOSFET
I_D @ 25˚C
R_DS(on)
31.6 A
80 mΩ
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low R_DS(on)
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased System Switching Frequency
Applications
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
• Switch Mode Power Supplies
• UPS
Part Number
C2M0080120D
Package
TO-247-3
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
I_{DS (DC)} Continuous Drain Current
I_{DS (pulse)} Pulsed Drain Current
V_GS Gate Source Voltage
31.6
20
80
V_GS@20 V, T_C = 25˚C
A
V_GS@20 V, T_C = 100˚C
A ^{Pulse width tP = 50 μs}
duty limited by T_jmax, T_C = 25˚C
-10/+25 V
Fig. 16
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
M_d
Mounting Torque
208
-55 to
+150
260
1
8.8
W T_C=25˚C
˚C
Fig. 15
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1
C2M0080120D Rev. A