C2M0045170D Datasheet, PDF (1/10 Pages) Cree, Inc – Silicon Carbide Power MOSFET C2MTM MOSFET Technology

V_DS
1700 V
C2M0045170D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
I_D @ 25˚C
R_DS(on)
72 A
45 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
TO-247-3
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Motor Drive
• Pulsed Power Applications
Part Number
C2M0045170D
Package
TO-247-3
Marking
C2M0045170
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
V_DSmax
V_GSmax
V_GSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
I_D
Continuous Drain Current
I_D(pulse) Pulsed Drain Current
P_D
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
1700
-10/+25
-5/+20
72
48
160
520
-40 to
+150
V VGS = 0 V, ID = 100 μA
V Absolute maximum values, AC (f >1 Hz)
V Recommended operational values
V_GS =20 V, T_C = 25˚C
A
V_GS =20 V, T_C = 100˚C
Fig. 19
A Pulse width t_P limited by T_jmax
Fig. 22
W T_C=25˚C, T_J = 150 ˚C
Fig. 20
˚C
T_L
Solder Temperature
M_d
Mounting Torque
260
˚C 1.6mm (0.063”) from case for 10s
1
8.8
Nm
lbf-in
M3 or 6-32 screw
1
C2M0045170D Rev. -, 06-2016