C2M0040120D Datasheet, PDF (1/10 Pages) Cree, Inc – N-Channel Enhancement Mode

V_DS
1200 V
C2M0040120D
Silicon Carbide Power MOSFET
TM
Z-FET MOSFET
I_D @ 25˚C
R_DS(on)
60 A
40 mΩ
N-Channel Enhancement Mode
Features
Package
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low R_DS(on)
• Easy to Parallel and Simple to Drive
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Increased System Switching Frequency
• Reduced Cooling Requirements
• Increased System Reliability
TO-247-3
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Motor Drive
Part Number
C2M0040120D
Package
TO-247-3
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
I_{DS (DC)} Continuous Drain Current
I_{DS (pulse)} Pulsed Drain Current
V_GS Gate Source Voltage
60
V_GS = 20 V, T_C = 25 °C
A
40
V_GS = 20 V, T_C = 100 °C
160
A ^{Pulse width tP limited by Tjmax}
T_C = 25 °C
-10/+25 V
Fig. 19
Fig. 22
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
M_d
Mounting Torque
330
-55 to
+150
260
1
8.8
W T_C=25 °C, TJ = 150 °C
˚C
Fig. 20
˚C 1.6 mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1
C2M0040120D Rev -