BDX62 Datasheet, PDF (4/5 Pages) Comset Semiconductor – PNP SILICON DARLINGTONS

BDX62
f_T
Transition Frequency
V_CE=-3 V, I_C=-3 A, f=1 MHz
BDX62A
BDX62B
-
7
BDX62C
BDX62
V_CE=-3 V, I_C=-0.5 A
BDX62A
BDX62B
-
1500
BDX62C
BDX62
h_FE
D.C. current gain (*)
V_CE=-3 V, I_C=-3 A
BDX62A
BDX62B
1000
-
BDX62C
BDX62
V_CE=-3 V, I_C=-8 A
BDX62A
BDX62B
-
750
BDX62C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et V_CEci = V
rated by an auxiliary circuit
- MHz
-
--
-
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51 1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
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