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| TIP42 Datasheet, PDF (3/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
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SEMICONDUCTORS
PNP TIP42-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
TIP42
ICES
Collector Cutoff Current
IE= 0, VCE = -VCEO
TIP42A
TIP42B
-
- -0.4 Ma
TIP42C
ICEO
Collector Cutoff Current
IB= 0, VCE = -30V
TIP42
TIP42A
-
IB= 0, VCE = -60V
TIP42B
TIP42C
-
- -0.7
mA
- -0.7
TIP42
IEBO
Emitter Cutoff Current
VEB= -5 V, IC= 0
TIP42A
TIP42B
-
-
-1 mA
TIP42C
TIP42 -40 -
-
VCEO
Collector-Emitter Breakdown
Voltage (*)
IC= -30 mA, IB= 0
TIP42A
TIP42B
-60
-80
-
-
-
-
V
TIP42C -100 -
-
TIP42
VCE(SAT)
Collector-Emitter saturation IC= -6 A, IB= -600 TIP42A
Voltage (*)
mA
TIP42B
-
- -1.5 V
TIP42C
TIP42
VBE(on)
Base-Emitter Voltage (*)
IC= -6 A, VCE= -4 V
TIP42A
TIP42B
-
-
-2
V
TIP42C
TIP42
VCE= -4 V, IC= -0.3 TIP42A
A
TIP42B
30
-
-
hFE
DC Current Gain (*)
TIP42C
TIP42
-
VCE= -4 V, IC= -3 A
TIP42A
TIP42B
15
-
75
TIP42C
TIP42
hfe
Small Signal Current Gain
VCE= -10 V, IC= -
0.5 A, f= 1kHz
TIP42A
TIP42B
20
-
-
-
TIP42C
TIP42
fT
Current Gain-Bandwidth
Product
VCE= -10 V, IC= -
0.5 A
TIP42A
TIP42B
3
-
- MHz
TIP42C
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
04/10/2012
COMSET SEMICONDUCTORS
3|4
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