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| TIP36 Datasheet, PDF (3/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
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SEMICONDUCTORS
PNP TIP36-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
TIP36
ICES
Collector Cutoff Current IE= 0, VCE = -VCEO
TIP36A
TIP36B
-
- -0.7 Ma
TIP36C
ICEO
Collector Cutoff Current
IB= 0, VCE = -30V
IB= 0, VCE = -60V
TIP36
TIP36A
-
TIP36B
TIP36C
-
-
-1
mA
-
-1
TIP36
IEBO
Emitter Cutoff Current
VEB= -5 V, IC= 0
TIP36A
TIP36B
-
-
-1 mA
TIP36C
TIP36 -40 -
-
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= -30 mA, IB= 0
TIP36A -60 -
TIP36B -80 -
-
-
V
TIP36C -100 -
-
TIP36
IC= -15 A, IB= -1.5 A
TIP36A
TIP36B
-
- -1.8 V
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
TIP36C
TIP36
IC= -25 A, IB= -5 A
TIP36A
TIP36B
-
-
-4
V
TIP36C
TIP36
IC= -15 A, VCE= -4 V
TIP36A
TIP36B
-
-
-2
V
VBE(on)
Base-Emitter Voltage (*)
TIP36C
TIP36
IC= -25 A, VCE= -4 V
TIP36A
TIP36B
-
-
-4
V
TIP36C
TIP36
VCE= -4 V, IC= -1.5 A
TIP36A
TIP36B
25
-
-
hFE
DC Current Gain (*)
TIP36C
TIP36
-
VCE= -4 V, IC= -15 A
TIP36A
TIP36B
15
-
75
TIP36C
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
04/10/2012
COMSET SEMICONDUCTORS
3|4
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