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TIP34 Datasheet, PDF (3/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS
SEMICONDUCTORS
PNP TIP34-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
TIP34
ICES
Collector Cutoff Current
IE= 0, VCE = -VCEO
TIP34A
TIP34B
-
- -0.4 Ma
TIP34C
ICEO
Collector Cutoff Current
IB= 0, VCE = -30V
IB= 0, VCE = -60V
TIP34
TIP34A
TIP34B
TIP34C
-
-
- -0.7
mA
- -0.7
TIP34
IEBO
Emitter Cutoff Current
VEB= -5 V
IC= 0
TIP34A
TIP34B
-
-
-1 mA
TIP34C
TIP34 -40 -
-
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= -30 mA
IB= 0
TIP34A -60 -
TIP34B -80 -
-
-
V
TIP34C -100 -
-
TIP34
IC= -3 A
IB= -300 mA
TIP34A
TIP34B
-
-
-1
V
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
TIP34C
TIP34
IC= -10 A
IB= -2.5 mA
TIP34A
TIP34B
-
-
-4
V
TIP34C
TIP34
VBE(on)
Base-Emitter Voltage (*)
IC= -3 A
VCE= -4 V
TIP34A
TIP34B
-
TIP34C
TIP34
- -1.6 V
IC= -10 A
VCE= -4 V
TIP34A
TIP34B
-
TIP34C
-
-3
V
TIP34
VCE= -4 V
IC= -1 A
TIP34A
TIP34B
40
-
-
hFE
DC Current Gain (*)
TIP34C
TIP34
-
VCE= -4 V
IC= -3 A
TIP34A
TIP34B
20
- 100
TIP34C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
02/10/2012
COMSET SEMICONDUCTORS
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